Volume 9, Issue 1 (march 2012 2012)                   IJMSE 2012, 9(1): 51-61 | Back to browse issues page

XML Print

Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:
M. J. Tafreshi, B. Dibaie, M. Fazli. GROWTH OF ZnS SINGLE CRYSTALS BY CVT TECHNIQUE UNDER DIFFERENT MASS TRANSPORT STABILITY CONDITIONS. IJMSE 2012; 9 (1) :51-61
URL: http://ijmse.iust.ac.ir/article-1-411-en.html
GROWTH OF ZnS SINGLE CRYSTALS BY CVT TECHNIQUE UNDER DIFFERENT MASS TRANSPORT STABILITY CONDITIONS
M. J. Tafreshi , B. Dibaie , M. Fazli
Abstract:   (24870 Views)
Abstract: A thermodynamic model was used to find out the optimum temperature for the growth of ZnS single crystals in closed ampoules by chemical vapor transport technique. Based on this model 1002 °C was found to be optimum temperature for 2 mg/cm3 concentration of transporting agent (iodine). ZnS Crystals were grown in optimum (1002 °C) and non-optimum (902 °C and 1102 °C) temperatures. The composition structure and microstructure of the grown crystals were studied by Atomic absorption spectroscopy, X-ray diffraction and Scanning electron microscopy measurements. Properties of the grown crystals were correlated to the growth conditions especially a stability in mass transport along the closed tube length.
Keywords: Semiconductors, Crystal growth, Electron microscopy, X-ray diffraction, Microstructure.
Full-Text [PDF 1509 kb]   (6447 Downloads)    
Type of Study: Research Paper | Subject: Ceramics
Add your comments about this article : Your username or Email:
CAPTCHA
Send email to the article author

Rights and permissions
Creative Commons License This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

© 2022 All Rights Reserved | Iranian Journal of Materials Science and Engineering

Designed & Developed by : Yektaweb